Performance of ZnSe-based scintillators at low temperatures

Applications that utilize scintillation detectors at low temperatures are growing in number. Many of these require materials with high light yield and a fast response. Here we report on the low-temperature characterisation ZnSe doped Al or Te, respectively. The X-ray luminescence decay curves were measured over 77–295 K temperature range, alpha particle excitation was used to examine output kinetics range 9–295 K. A significant improvement characteristics observed cooling below 100 crystals increases by factor about two, time constant decreases almost an order magnitude 0.3–0.4 ?s. These improvements enhance potential ZnSe-based for application cryogenic ionising radiation. • Decrease causes tangible changes spectra Te. results crystals. two one Te is potent material